A rumor out of Korea has Samsung Foundry expected to announce the beginning of mass production of chips at the 3nm process node.
, that Samsung will soon beat out TSMC by starting mass production of chips made using its 3nm process node next week with TSMC starting 3nm mass production later this year.
Additionally, Samsung is going to use a new transistor structure on its 3nm chips called GAA or gate-all-around. With this structure, the flow of current is controlled by gates that contact the transistor on all four sides. TSMC will continue to use the FinFET structure which has been in place since the 22nm process node debuted. TSMC will finally scrap FinFET for GAA when it starts shipping 2nm chips in 2026.
Samsung's GAA design is called Multi-Bridge Channel Field Effect Transistor also known as nanowires. This is one of only two different gate-all-around designs currently available with the second one known as GAAFET or nanowire.The report cites a major Korean news agency that says Samsung is expected to make a major announcement about its 3nm chip production shortly.
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